MMFTN170 MMFTN170 n n-channel enhancement mode field effect transistor n-kanal feldeffekt transistor C anreicherungstyp n version 2011-01-28 dimensions - ma?e [mm] 1 = g 2 = s 3 = d power dissipation C verlustleistung 300 mw plastic case kunststoffgeh?use sot-23 (to-236) weight approx. C gewicht ca. 0.01 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped and reeled standard lieferform gegurtet auf rolle maximum ratings (t a = 25c) grenzwerte (t a = 25c) MMFTN170 drain-source-voltage C drain-source-spannung g short v dss 60 v drain-gate-voltage C drain-gate-spannung r gs < 1 m v dgr 60 v gate-source-voltage continuos gate-source-spannung dauernd v gss 20 v power dissipation C verlustleistung p tot 300 mw drain current continuos C drainstrom (dc) i d 500 ma peak drain current C drain-spitzenstrom i dm 800 ma junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s 150c -55+150c ? diotec semiconductor ag http://www.diotec.com/ 1 2 . 5 m a x 1 . 3 0 . 1 1.1 0.4 2.9 0.1 1 2 3 type code 1.9
MMFTN170 characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. drain-source breakdown voltage C drain-source-durchbruchspannung i d = 100 a v (br)dss 60 v drain-source leakage current C drain-source leckstrom g short v ds = 25 v i dss 0.5 a gate-body leakage current C gate-substrat leckstrom v gs = 15 v i gss 10 na gate-source threshold voltage C gate-source schwellspannung v gs = v ds , i d = 1 ma v gs(th) 0.8 v 3 v drain-source on-state resistance C drain-source einschaltwiderstand v gs = 10 v , i d = 200 ma r ds(on) 5 forward transconductance C bertragungssteilheit v ds > 2 v ds(on) , i d = 200 ma g fs 320 ms input capacitance C eingangskapazit?t v ds = 10 v, f = 1 mhz c iss 40 pf output capacitance C ausgangskapazit?t v ds = 10 v, f = 1 mhz c oss 30 pf reverse transfer capacitance C rckwirkungskapazit?t v ds = 10 v, f = 1 mhz c rss 10 pf turn-on time C einschaltzeit v dd = 25 v, i d = 500 ma, v gs = 10 v, r g = 50 t d(on) 10 ns turn-off delay time C ausschaltverz?gerung v dd = 25 v, i d = 500 ma, v gs = 10 v, r g = 50 t d(off) 10 ns 2 http://www.diotec.com/ ? diotec semiconductor ag
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